Band Structure Anisotropy in Semiconductor Quantum Wells
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Band Structure Anisotropy in Semiconductor Quantum Wells

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Published by Storming Media .
Written in English


  • SCI077000

Book details:

The Physical Object
ID Numbers
Open LibraryOL11849046M
ISBN 101423546857
ISBN 109781423546856

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An 8×8 band edge potential matrix of the [hkil]-oriented wurtzite Hamiltonian is developed and applied to explore optical anisotropy in [hkil]-oriented wurtzite semiconductor quantum wells. The wave-vector-dependent optical matrix elements are expressed entirely in terms.   Quantum Wells, Wires and Dots provides all the essential information, both theoretical and computational, to develop an understanding of the electronic, optical and transport properties of these semiconductor book will lead the reader through comprehensive explanations and mathematical derivations to the point where they can design semiconductor . Band structures of the semiconductors and semiconductor compounds of interest are also main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of . David A. B. Miller. Rm. 4B, AT&T Bell Laboratories Holmdel, NJ USA 1 Introduction Quantum wells are thin layered semiconductor structures in which we can observe and control many quantum mechanical Size: KB.

The purpose of the present set of lectures is to introduce students to the field of the optical properties of quantum wells (and superlattices?). Interband Optical Transitions in Extremely Anisotropic Semiconductors: I Bound and Unbound D.S. Chemla and L.J. Sham, Tuning of the Valence-Band Structure of GaAs Quantum Wells by Uniaxial Cited by: 3.   Optical Properties and Band Structure of Semiconductors, Volume 1 presents the experimental studies of the fundamental energy band structure of semiconductors and insulators. This book provides detailed information of the available measurement methods and results for a large number of both cubic and non-cubic Edition: 1. In lower dimensional semiconductors, such as in semiconductor quantum wells, the electron occupation in k-space is not symmetric and therefore the average value of the momentum matrix element becomes dependent on the polarization direction of the electric field. Optical Interband Transition in Quantum Wells Introduction:File Size: KB. The quantum well infrared photodetector (QWIP) is a semiconductor infrared photon detector relying on intersubband absorption within either the conduction band (n-type) or the valence band (p-type). The idea of utilizing a quantum well for infrared detection was first presented by Esaki and Sakaka in

  Introducing senior and graduate students and research scientists to quantum mechanics concepts, which are becoming an essential tool in modern engineering, Engineering Quantum Mechanics develops a non-Markovian model for the optical gain of semiconductor, taking into account the rigorous electronic band-structure and the non-Markovian. In quantum-wells thinner than 80 A the two contributions are found to be comparable in magnitude. In wider wells the strain-induced contribution dominates. The electron g factor anisotropy is a continuous function of the QW width and vanishes for widths very large or Cited by: g factor anisotropy as well as to the splitting of the rY, band into the light- and heavy-hole sub-bands. The g-factor anisotropy exhibits non-monotonic behaviour and, for CdTe/,.,,Te QW structures, reaches a maximum for well widths - 40 A. The quantum-confinement-induced part. Erratum: “Optical anisotropy of (11l)-oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band” [J. Appl. Phys. 86, ()].